GaN HEMT-on-Si Wafer (for Power Applications)
Product Name: HV650_200mm_GaN HEMT-on-Si
Epi Structure: 15 nm Al₀.₂GaN
Substrate Size: 200 mm
Key Features (Summary)
Excellent buffer layer leakage current characteristics
High breakdown voltage and threshold voltage
Superior uniformity across 8-inch wafers (thickness, Al content)
High-quality GaN epitaxial crystal structure
Smooth surface without cracks or slips
New p-GaN growth technology compatible with E-mode devices
Main Specifications (GaN HEMT-on-Si)
| Substrate diameter [mm] | 200 ± 0.3 | |
| Substrate thickness [μm] | 1150 ± 25 | |
| Buffer Total thickness [μm] | 5.5 | |
| Channel Thickness [nm] | 200 | or customized |
| Barrier type | AlGaN | |
| Barrier Thickness [nm] | 15 | or customized |
| Barrier Al Composition [%] | 20 | or customized |
| AlN Spacer [No = 0 / Yes = 1] | 1 | |
| AlN Spacer thickness [nm] | 1 | or customized |
| Cap type | D-Mode: μ-GaN E-Mode: p-GaN | |
| Cap thickness [nm] | D-Mode: 2 E-Mode: 80–90 | or customized |
| Mg doping level [cm⁻³] | 3.00E+19 | or customized |
| XRD Rocking Curve [arcsec] | (002) ≤ 600 (102) ≤ 800 | |
| Surface Roughness [nm] | ≤ 1.0 | |
| Warp / Bow [μm] | ≤ 50 |
GaN HEMT-on-SiC Wafer (for RF Applications)
Product Name: RF_100mm_GaN HEMT-on-SiC
Epi Structure: 22 nm Al₀.₂₄GaN
Substrate Size: 100 mm or 150 mm
Substrate Characteristics:
Semi-insulating SiC with low micropipe density, 500 ± 25 μm thickness
| Substrate Type | Semi-Insulating SiC | |
| Substrate diameter [mm] | 100 or 150 | |
| Substrate thickness [μm] | 500.0 μm ± 25.0 μm | |
| Substrate Micropipe Density | ≤ 0.2 / cm² | |
| Substrate Resistivity | ≥ 1E+10 Ω·cm | |
| Epi Total thickness [nm] | ≤ 500 | |
| Channel Thickness [nm] | 250 | or customized |
| Barrier type | AlGaN | or InAlN |
| Barrier Thickness [nm] | 25 | or customized |
| Barrier Al Composition [%] | 24 | or customized |
| Barrier Al STD [%] | ≤ 2 | |
| AlN Spacer [No = 0 / Yes = 1] | 1 | |
| AlN Spacer thickness [nm] | 1 | or customized |
| Cap type | GaN or SiN | In-Situ SiN |
| Cap thickness [nm] | GaN: 2 / SiN: 30 | or customized |
| XRD Rocking Curve [arcsec] | (002) ≤ 300, (102) ≤ 400 | |
| Surface Roughness [nm] | ≤ 0.5 | |
| Warp / Bow [μm] | ≤ 20 | |
| 2DEG Sheet Resistance | ≤ 350 ohm/sq | Depends on AlGaN |
| 2DEG Density | ≥ 2000 cm²/V·s | |
| 2DEG Mobility | ≥ 7E12 cm⁻² |
The structure of nucleation & buffer layer are based on WaveLord’s special specification.